1. Haɗakar Solvothermal
1. Danyerabon abu"
Ana haɗa garin zinc da garin selenium a rabon molar 1:1, sannan a ƙara ruwan da aka cire daga ion ko ethylene glycol a matsayin matsakaicin sinadarin solvent 35.
2.Yanayin amsawa
Zafin amsawa: 180-220°C
o Lokacin amsawa: awanni 12-24
o Matsi: Kula da matsin lamba da kansa ke samarwa a cikin injin amsawar da aka rufe
Haɗin zinc da selenium kai tsaye yana gudana ta hanyar dumama don samar da lu'ulu'u na zinc selenide nanoscale 35.
3.Tsarin bayan magani"
Bayan an yi maganin, an saka shi a cikin injin centrifuge, an wanke shi da ammonia mai narkewa (80°C), methanol, sannan aka busar da shi ta injin tsotsa (120°C, P₂O₅).tainfoda mai tsarki > 99.9% 13.
2. Hanyar adana tururin sinadarai
1.Maganin kayan da aka riga aka yi amfani da su
Tsarkakken sinadarin zinc ya kai kashi ≥99.99% kuma an sanya shi a cikin wani bututun graphite.
o Ana jigilar iskar hydrogen selenide ta hanyar amfani da iskar argon.
2.Kula da zafin jiki
o Yankin fitar da sinadarin zinc: 850-900°C
o Yankin ajiya: 450-500°C
Tasirin tururin zinc da hydrogen selenide ta hanyar yanayin zafi 6.
3.Sigogin iskar gas
o Gudun Argon: 5-10 L/min
o Matsin sinadarin hydrogen selenide na wani ɓangare:0.1-0.3 atm
Yawan fitarwa na iya kaiwa 0.5-1.2 mm/h, wanda ke haifar da samuwar polycrystalline zinc selenide mai kauri 60-100 mm..
3. Hanyar haɗa kai tsaye ta hanyar ƙarfi
1. Danyesarrafa kayan"
An yi amfani da maganin zinc chloride tare da maganin oxalic acid don samar da sinadarin zinc oxalate, wanda aka busar aka niƙa aka gauraya shi da foda selenium a rabo na 1: 1.05 molar 4..
2.Sigogin amsawar zafi
o Zafin tanda na bututun injin: 600-650°C
o Lokacin Dumi: Awa 4-6
Ana samar da foda selenide na zinc mai girman barbashi na 2-10 μm ta hanyar amsawar watsawa mai ƙarfi 4.
Kwatanta muhimman hanyoyin aiki
| hanyar | Tsarin samfurin | Girman ƙwayoyin cuta/kauri | Ƙirgaggun lu'ulu'u | Fagen aikace-aikace |
| Hanyar Solvothermal 35 | Kwallayen Nano/sanduna | 20-100 nm | Mai siffar cubic sphalerite | Na'urorin lantarki na Optoelectronic |
| Takardar tururi 6 | Tubalan Polycrystalline | 60-100 mm | Tsarin hexagonal | Infrared optics |
| Hanyar mataki mai ƙarfi 4 | Foda mai girman micron | 2-10 μm | Matakin Cubic | Abubuwan da ke gaba da kayan infrared |
Muhimman abubuwan da ke tattare da sarrafa tsari na musamman: hanyar solvothermal tana buƙatar ƙara surfactants kamar oleic acid don daidaita yanayin halittar 5, kuma ajiyar tururi yana buƙatar ƙaiƙayin substrate ya zama < Ra20 don tabbatar da daidaiton ajiyar 6.
1. Tacewar tururi ta zahiri (PVD).
1.Hanyar Fasaha
Ana tururin sinadarin zinc selenide a cikin wani wuri mai tsabta sannan a zuba shi a saman substrate ta amfani da fasahar fesawa ko kuma fasahar fitar da zafi.
o Ana dumama tushen ƙafewar zinc da selenium zuwa yanayin zafi daban-daban (yankin ƙafewar zinc: 800–850 °C, yankin ƙafewar selenium: 450–500 °C), kuma ana sarrafa rabon stoichiometric ta hanyar sarrafa ƙimar ƙafewar"12.
2.Sarrafa siga
o Injin tsabtace iska: ≤1×10⁻³ Pa
Zafin jiki: 200–400°C
o Adadin saka hannun jari:0.2–1.0 nm/s
Ana iya shirya fina-finan zinc selenide masu kauri na 50-500 nm don amfani a cikin na'urorin gani na infrared 25.
2Hanyar niƙa ƙwallon inji
1.Gudanar da kayan da aka sarrafa
Ana haɗa foda na zinc (tsarki ≥99.9%) da foda na selenium a rabo na 1:1 na molar sannan a ɗora shi a cikin kwalbar niƙa mai bakin ƙarfe 23.
2.Sigogin tsari
o Lokacin niƙa ƙwallon: awanni 10-20
Sauri: 300–500 rpm
o Rabon pellet: 10:1 (ƙwallon niƙa na zirconia).
An samar da ƙwayoyin zinc selenide masu girman barbashi na 50–200 nm ta hanyar haɗakar sinadarai, tare da tsarkin >99% 23.
3. Hanyar matsewa mai zafi
1.Shirye-shiryen precursor
o Nanopowder na zinc selenide (girman barbashi ƙasa da 100 nm) wanda aka haɗa ta hanyar solvothermal a matsayin kayan aiki 4.
2.Sigogi na Sintering
Zafin jiki: 800–1000°C
Matsi: 30–50 MPa
o A ci gaba da dumi: Awa 2–4
Samfurin yana da yawa daga > 98% kuma ana iya sarrafa shi zuwa manyan abubuwan gani kamar tagogi ko ruwan tabarau na infrared 45.
4. Epitaxy na ƙwayoyin halitta (MBE).
1.Yanayin injin mai matuƙar girma
o Injin tsabtace iska: ≤1×10⁻⁷ Pa
o Hasken ƙwayoyin zinc da selenium suna sarrafa kwararar da ke ta hanyar tushen fitar da iskar electron6 daidai.
2.Sigogin girma
Zafin tushe: 300–500°C (Ana amfani da GaAs ko sapphire substrates akai-akai).
o Yawan girma:0.1–0.5 nm/s
Za a iya shirya siraran fina-finai guda ɗaya na zinc selenide a cikin kauri na 0.1–5 μm don na'urorin lantarki masu inganci56.
Lokacin Saƙo: Afrilu-23-2025