Tsarin haɗin jiki na zinc selenide ya ƙunshi hanyoyin fasaha masu zuwa da cikakkun bayanai

Labarai

Tsarin haɗin jiki na zinc selenide ya ƙunshi hanyoyin fasaha masu zuwa da cikakkun bayanai

1. Solvothermal kira

1. Danyerabon abu"
Zinc foda da selenium foda suna gauraye a 1: 1 molar rabo, da deionized ruwa ko ethylene glycol an kara a matsayin sauran ƙarfi matsakaici 35..

2 .Yanayin amsawa

o Zazzabi: 180-220°C

o Lokacin amsawa: 12-24 hours

o Matsi: Kula da matsi mai ƙirƙira da kai a cikin rufaffiyar abin dauki
Haɗin kai tsaye na zinc da selenium ana sauƙaƙe ta hanyar dumama don samar da nanoscale zinc selenide lu'ulu'u 35.

3.Bayan magani tsari"
Bayan an yi maganin, an wanke shi da ammonia (80 ° C), methanol, da bushewa (120 ° C, P₂O₅).samufoda> 99.9% tsarki 13.


2. Hanyar sanya tururi

1.Raw kayan pretreatment

o Tsaftar albarkatun zinc shine ≥ 99.99% kuma an sanya shi a cikin crucible graphite.

o Ana jigilar iskar hydrogen selenide ta hanyar jigilar iskar argon6.

2 .Kula da yanayin zafi

o Yankin ƙafewar Zinc: 850-900°C

o Yanki na ajiya: 450-500°C
Zubar da hankalin tururin zinc da hydrogen selenide ta yanayin zafin jiki 6.

3 .Sifofin gas

Ruwan Argon: 5-10 l/min

o Sashe na matsin lamba na hydrogen selenide:0.1 - 0.3 atom
Adadin ajiya na iya kaiwa 0.5-1.2 mm / h, yana haifar da samuwar 60-100 mm kauri polycrystalline zinc selenide 6.


3. Hanyar haɗin kai tsaye mai ƙarfi-lokaci

1. Danyekayan aiki"
An yi maganin maganin zinc chloride tare da maganin oxalic acid don samar da zinc oxalate precipitate, wanda aka bushe da ƙasa kuma an gauraye shi da foda selenium a rabo na 1: 1.05 molar 4..

2 .Thermal dauki sigogi

o Matsakaicin bututun tanderun zafin jiki: 600-650°C

o Rike lokacin dumi: 4-6 hours
Zinc selenide foda tare da girman barbashi na 2-10 μm ana haifar da shi ta hanyar haɓakaccen lokaci mai ƙarfi 4.


Kwatanta mahimman matakai

hanya

Topography samfurin

Girman barbashi/kauri

Crystallinity

Filayen aikace-aikace

Hanyar Solvothermal 35

Nanoballs / sanduna

20-100 nm

Cubic sphalerite

Na'urorin Optoelectronic

Turi 6

Polycrystalline tubalan

60-100 mm

Tsarin hexagonal

Infrared optics

Hanyar mai ƙarfi 4

Foda masu girman ƙananan ƙananan

2-10 m

Tsarin Cubic

Infrared abu precursors

Mahimman mahimman bayanai na sarrafa tsari na musamman: hanyar solvothermal tana buƙatar ƙara abubuwan haɓakawa kamar oleic acid don daidaita yanayin halittar mutum 5, kuma jigon tururi yana buƙatar ƙaƙƙarfan ƙazamin ya zama .

 

 

 

 

 

1. Turin jiki (PVD).

1 .Hanyar Fasaha

o Zinc selenide danyen kayan yana tururi a cikin wani yanayi mara amfani kuma ana ajiye shi a saman dandali ta amfani da sputtering ko thermal evaporation technology12.

Ana ɗora tushen ƙawancen zinc da selenium zuwa nau'ikan zafin jiki daban-daban (yankin evaporation na zinc: 800-850 ° C, yankin ƙawancen selenium: 450-500 ° C), kuma ana sarrafa rabon stoichiometric ta hanyar sarrafa ƙimar evaporation."12.

2 .Sarrafa siga

o Vacuum: ≤1×10⁻³ Pa

o Basal zafin jiki: 200-400 ° C

o Yawan ajiya:0.2-1.0 nm/s
Zinc selenide fina-finai tare da kauri na 50-500 nm za a iya shirya don amfani a infrared optics 25.


2. Hanyar niƙa ƙwallon inji

1.Gudanar da albarkatun kasa

o Zinc foda (tsarki≥99.9%) ana haxa shi da foda selenium a 1:1 molar rabo kuma an loda shi a cikin wani bakin karfe niƙa kwalba 23.

2 .Tsari sigogi

o Lokacin niƙa ball: 10-20 hours

Gudun gudu: 300-500 rpm

Pellet rabo: 10: 1 (zirconia niƙa bukukuwa).
Zinc selenide nanoparticles tare da wani barbashi girman 50-200 nm aka generated ta inji alloying halayen, tare da tsarki na> 99% 23.


3. Hanyar matsi mai zafi

1 .Precursor shiri

o Zinc selenide nanopowder (girman barbashi <100 nm) wanda aka haɗa ta hanyar solvothermal azaman albarkatun ƙasa 4.

2 .Sintering sigogi

o Zazzabi: 800-1000 ° C

o Matsi: 30-50 MPa

o Ci gaba da dumi: 2-4 hours
Samfurin yana da yawa> 98% kuma ana iya sarrafa shi zuwa manyan kayan aikin gani kamar windows infrared ko ruwan tabarau 45.


4. molecular beam epitaxy (MBE).

1.Mahalli mai girman gaske

o Vacuum: ≤1×10⁻ Pa

o The zinc da selenium biams suna sarrafa daidai gwargwado ta hanyar fitar da bututun lantarki.

2.Siffofin girma

o Base zafin jiki: 300-500 ° C (GaAs ko sapphire substrates yawanci amfani).

o Yawan girma:0.1-0.5 nm/s
Za a iya shirya fina-finai na bakin ciki na zinc guda ɗaya-crystal selenide a cikin kewayon kauri na 0.1-5 μm don ingantattun na'urorin optoelectronic56.

 


Lokacin aikawa: Afrilu-23-2025